TGA2214_15 Datasheet, PDF (1/13 Pages) TriQuint Semiconductor – 2 to 18 GHz 5W GaN Power Amplifier

Applications
 Test Equipment
 Electronic Warfare
 Military Radar
TGA2214
2 to 18 GHz 5W GaN Power Amplifier
Product Features
Functional Block Diagram
 Frequency Range: 2 - 18 GHz
 Pout: > 37 dBm at PIN = 23 dBm
 PAE: > 20 % at Pin = 23 dBm
 Large Signal Gain (Pin = 23 dBm): > 14 dB
 Small Signal Gain: > 22 dB
 Return Loss: > 7 dB
 Bias: VD = 22 V, IDQ = 450 mA, VG = -2.3 V Typical
 Chip Dimensions: 3 x 5 x 0.10 mm
 Performance under CW operation
2
1
6
3
4
5
General Description
TriQuint’s TGA2214 is a wideband power amplifier
fabricated on TriQuint’s TQGaN15 GaN on SiC process.
The TGA2214 operates from 2 – 18 GHz and achieves
5 W of saturated output power with 14 dB of large signal
gain and greater than 20% power-added efficiency .
This combination of wideband power, gain and efficiency
provides system designers the flexibility to improve
system performance while reducing size and cost.
The TGA2214 is matched to 50 Ω with integrated DC
blocking capacitors on both RF ports simplifying system
integration; it is ideally suited for electronic warfare, test
instrumentation and radar applications across both
military and commercial markets.
Lead free and RoHS compliant.
Evaluation Boards are available upon request.
Pad Configuration
Pad No.
1
2
3
4
5
6
Symbol
RFIN
VG1
VG2
RFOUT
VD2
VD1
Ordering Information
Part
TGA2214
ECCN Description
3A001.b.2.c
2 - 18 GHz 5W GaN
Power Amplifier
Preliminary Datasheet: 01-26-15
© 2014 TriQuint
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Disclaimer: Subject to change without notice
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