TGA1342 Datasheet, PDF (1/4 Pages) TriQuint Semiconductor – 2 -20 GHz Wideband AGC Amplifier

Advance Product Information
2 -20 GHz Wideband AGC Amplifier
TGA1342-EPU
Typical Electrical Characteristics
Key Features and Performance
• 0.5 um MESFET Technology
• 9 dB Nominal Gain
• 3.5 dB NF Typical Midband
• 17.5 dBm Nominal Pout @ P1dB
• Bias 5-8V @ 60 mA
• Dimensions 3.378mm x 2.032mm
Primary Applications
• Wideband Gain Block Amplifier
• Wideband Low Noise Amplifier
S21 Gain (dB)
VD=5v Id=60ma Temp=25C
12.0
10.0
8.0
6.0
4.0
2 4 6 8 10 12 14 16 18 20
Frequency (GHz)
S11 Input Return Loss (dB)
VD=5v Id=60ma Temp=25C
0.0
-10.0
-20.0
-30.0
-40.0
2 4 6 8 10 12 14 16 18 20
Frequency (GHz)
6.0
5.0
4.0
3.0
2.0
1.0
2
Noise Figure (dB)
VD=6v Id=60ma Temp=25C
4 6 8 10 12 14 16 18
Frequency (GHz)
S22 Output Return Loss (dB)
VD=5v Id=60ma Temp=25C
0.0
-10.0
-20.0
-30.0
-40.0
2 4 6 8 10 12 14 16 18 20
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com
1
rev 11/10/98