TGA1342-SCC_15 Datasheet, PDF (1/7 Pages) TriQuint Semiconductor – 2 20 GHz Wideband AGC Amplifier

Product Data Sheet
2-20 GHz Wideband AGC Amplifier
TGA1342-SCC
Aug 8, 2007
Key Features and Performance
• 0.5 um MESFET Technology
• 9 dB Nominal Gain
• 3.5 dB NF Typical Midband
• 17.5 dBm Nominal Pout @ P1dB
• Bias 5-8V @ 60 mA
• Dimensions 3.4 x 2.0 x 0.1 mm
Chip Dimensions: 3.4 x 2.0 x 0.1 mm
Primary Applications
• Wideband Gain Block / LN Amplifier
• X-Ku Point to Point Radio
• IF & LO Buffer Applications
Description
The TriQuint TGA1342-SCC is a monolithic dual
gate low noise distributed amplifier with AGC via the
control gate. This LNA operates from 2 to 20 GHz.
Nine 120um gatewidth FETs typically provide 3.5 dB
of noise figure, 17.5 dBm of output power at 1 dB
gain compression, and 9 dB small signal gain.
Typical input return loss and output return loss are
20 dB. Ground is provided to the circuitry through
vias to the backside metallization. The TGA1342-
SCC low noise distributed amplifier is suitable for a
commercial radio and variety of wideband electronic
warfare systems such as radar warning receivers,
electronic counter measures, decoys, jammers and
phased array systems.
Bond pad and backside metallization is gold plated
for compatibility with eutectic alloy attachment
methods as well as the thermocompression and
thermosonic wire bonding processes. The
TGA1342-SCC is supplied in chip form and is
assembled using automated equipment.
Typical Electrical Characteristics
Vd = 6V, Id = 60mA, Vg = -0.8V, Vctrl = open
12
11
10
9
8
7
6
2 4 6 8 10 12 14 16 18 20
Frequency (GHz)
6.0
5.0
4.0
3.0
2.0
1.0
0.0
2 4 6 8 10 12 14 16 18 20
Frequency (GHz)
1
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