TGA1319B-EPU Datasheet, PDF (1/5 Pages) TriQuint Semiconductor – Ka Band Low Noise Amplifier

Advance Product Information
June 14, 2001
Ka Band Low Noise Amplifier
TGA1319B-EPU
Chip Dimensions 2.237 mm x 1.144 mm
Preliminary Data, 6-10 Fixtured samples @ 25C
Key Features and Performance
• 0.15um pHEMT Technology
• 21-27 GHz Frequency Range
• 1.75 dB Nominal Noise Figure
• 19 dB Nominal Gain
• 8dBm Pout
• 3V, 45 mA Self -biased
Primary Applications
• Point-to-Point Radio
• Point-to-Multipoint Communications
two 1-mil ball bonds at RF interconnects
6.0
5
5.0
0
4.0
NF
(dB) ^3.0
-5
S11
(dB)
-10
2.0
-15
1.0
-20
0.0
15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0
Frequency (GHz)
NF @ 25C
-25
1 3 6 8 11 13 16 18 21 23 26 28 31 33 36 38
Frequency (GHz)
S11 @ 25C
25
20
15
S21
(dB)
10
5
0
1 3 6 8 11 13 16 18 21 23 26 28 31 33 36 38
Frequency (GHz)
Gain @ 25C
0
-5
-10
-15
-20
S22
(dB)
-25
-30
-35
-40
-45
1 3 6 8 11 13 16 18 21 23 26 28 31 33 36 38
Fre que ncy (GHz)
S22 @ 25C
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com
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