TGA1319A Datasheet, PDF (1/3 Pages) TriQuint Semiconductor – Ka Band Low Noise Amplifier

Advance Product Information
August 29, 2000
Ka Band Low Noise Amplifier
TGA1319A
Chip Dimensions 1.985 mm x .980 mm
Preliminary Data, 2 Fixtured samples @ 25C
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
15 16 17 18 19 20 21 22 23 24 25 26 27
Typical NF @ 25C
30
28
26
24
22
20
18
16
14
12
10
15 16 17 18 19 20 21 22 23 24 25 26
Typical Gain @ 25C
Key Features and Performance
• 0.15um pHEMT Technology
• 21-27 GHz Frequency Range
• 2 dB Nominal Noise Figure
• 19 dB Nominal Gain
• 12 dBm Pout
• 3V, 45 mA
Primary Applications
• Point-to-Point Radio
• Point-to-Multipoint Communications
0
-4
-8
-12
-16
-20
15 16 17 18 19 20 21 22 23 24 25 26
Typical S11 @ 25C
0
-5
-10
-15
-20
15 16 17 18 19 20 21 22 23 24 25 26
Typical S22 @ 25C
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com
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