TGA1307 Datasheet, PDF (1/7 Pages) TriQuint Semiconductor – Ka Band Low Noise Amplifier

Advance Product Information
May 16, 2000
Ka Band Low Noise Amplifier TGA1307-EPU
Chip Dimensions 2.54 mm x 1.15 mm
Key Features and Performance
• 0.25um pHEMT Technology
• 23-29 GHz Frequency Range
• 3.1 dB Nominal Noise Figure 28GHz
• 17 dB Nominal Gain
• OTOI > 22dBm
• 5V, 50 mA Self-Bias
Primary Applications
• Point-to-Point Radio
• Point-to-Multipoint Communications
Typical NF @ 25C
10
Vd = 5V, Id1 ^≈ 45mA
9
8
7
6
5
4
3
R/C 35_35
2
R/C 50_50
R/C 59_59
1
R/C 70_70
R/C 75_75
0
18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35
Frequency (GHz)
EG1307 Fixtured Small Signal Data, Wafer 991880601
Vd = 5V, Id1 ^≈ 45mA
25
20
Typical Gain @ 25C
15
10
R/C 9_21
R/C 40_35
5
R/C 47_31
R/C 44_15
R/C 50_30
0
18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com
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