TGA1172 Datasheet, PDF (1/4 Pages) TriQuint Semiconductor – 27 - 32 GHz 1W Power Amplifier

Advance Product Information
March 21, 2000
27 - 32 GHz 1W Power Amplifier
TGA1172
Chip Dimensions 2.69 mm x 1.37 mm
Small Signal Gain
15
25
10 _{6V, 630 mA S21}
15
5
5
0
-5
-5
-15
-10
S11
-25
-15
-35
S22
-20
-45
10
15
20
25
30
35
40
Frequency (GHz)
Key Features
• 0.25 um pHEMT Technology
• 18 dB Gain at 28 GHz
• 29 dBm Nominal P1dB
• 37dBm OTOI typical at 28GHz
• Input/Output RL < -10 dB
• Bias 6 - 7V @ 630 mA
Primary Applications
• Point-to-Point Radio
• Point-to-Multipoint Communications
• Ka Band Sat-Com
Vd1
Vd2
Vd3
Vg2
Vg3
RF
IN
600µm
1200µm
RF
OUT
2400µm
Vg1
Vd1
Vg2
Vd2
Vg3
Vd3
Amplifier Topology
32
31
30
29
28
27
26
25
26
Output Power at P1dB
6V, 630 mA
27
28
29
30
31
32
Frequency (GHz)
Output Third Order Intercept
40
39
38
37
36
35
34
33
6V, 630 mA
32
31
30
26
27
28
29
30
31
32
33
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com
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