TGA1141 Datasheet, PDF (1/6 Pages) TriQuint Semiconductor – 33-36 GHz 2W Power Amplifier

Advance Product Information
Feb 4, 2000
33-36 GHz 2W Power Amplifier
TGA1141
Key Features
• 0.25 um pHEMT Technology
• 17 dB Nominal Gain
• 31 dBm Pout @ P1dB,
• Psat 33dBm @ 6V , 34dBm @7V
• Bias 6 - 7V @ 1.5A
Chip Dimensions 4.13 mm x 3.3 mm
(
)
Wafer Lot 9918802-1, -2, -3, +6V, ~ 880mA
22
Primary Applications
• Military Radar Systems
• Ka Band Sat-Com
• Point-to-Point Radio
20
18
Performance Summary Table
16
Description
Performance Evaluation
14
Frequency range
Fixtured with Flare TFNs
33 to 36 GHz
12
Small signal gain
Input return loss
10
30
32
34
36
38
40
Output return loss
Frequency (GHz)
Output power
35
34
33
PAE
> 17 dB nom, 34 - 35.2 GHz
> 17 dB nom, 33 - 36 GHz
~ 5 dB nom, 34 - 35.2 GHz
~ 5 dB nom. 33 – 36 GHz
> 8 dB nom, 34 - 35.2 GHz
> 7 dB nom, 33 - 36 GHz
32.3dBm min. 34 –35.2 GHz
31.5dBm min, 34 – 35.2 GHz
over temp.
> 20% +25C
32
Operating temperature range
Tested under –26, +25, &
31
+100C
Predict: -43C
30
Ids
< 1.5 A max over operating
29
P1dB_ave
Vds
frequency and Temp. range
+6V
28
Psat_ave
27
Die size
4.134 mm x 3.300 mm
13.6mm²
26
25
32
33
34
35
36
37
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com
1