TGA1141-EPU Datasheet, PDF (1/9 Pages) TriQuint Semiconductor – 33-36 GHz 2W Power Amplifier

Advance Product Information
August 27, 2003
33-36 GHz 2W Power Amplifier
TGA1141-EPU
Key Features
• 0.25 um pHEMT Technology
• 17 dB Nominal Gain
• 31 dBm Pout @ P1dB,
• Psat 33dBm @ 6V , 34dBm @7V
• Bias 6 - 7V @ Iq = 880 mA, Id = 1.3 A
at Psat
• Chip Dimensions 4.13 x 3.30 x 0.1 mm
Bias Conditions: Vd = 6 V, Id = 880 mA
22
20
18
16
14
12
10
30
32
34
36
38
Frequency (GHz)
Primary Applications
• Military Radar Systems
• Ka Band Sat-Com
• Point-to-Point Radio
40
35
34
33
32
31
30
29
28
27
26
25
32
P1dB_ave
Psat_ave
33
34
35
36
37
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
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