TGA1135B Datasheet, PDF (1/8 Pages) TriQuint Semiconductor – 18-27.5 GHz 1W Power Amplifier

Advance Product Information
Feb 4, 2000
18-27.5 GHz 1W Power Amplifier
TGA1135B
Key Features
• 0.25 um pHEMT Technology
• 14 dB Nominal Gain at 23GHz
• 30 dBm Nominal P1dB
• 38dBm OTOI typical
• Typical 15dB Input/Output RL
• Bias 6 - 7V @ 540 mA
• On-chip power detector diode
Chip Dimensions 2.641 mm x 1.480 mm
Primary Applications
• Point-to-Point Radio
• Point-to-Multipoint Communications
• Ka Band Sat-Com
TGA1135B Fixtured Amplifier Typical Small Signal Data
Wafer 993150303, 6V/540mA
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
Frequency (GHz)
TGA1135B Nominal Output Power
Wafer 993150303, Idq=540mA
32
31.5
31
VD = 7V
30.5
30
29.5
VD = 6V
29
28.5
28
Note: 1 dB of
compression not
reached on some parts
at 27, 27.5 GHz
27.5
27
16 17 18 19 20 21 22 23 24 25 26 27 28 29
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com
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