TGA1082B Datasheet, PDF (1/3 Pages) TriQuint Semiconductor – 27- 32 GHz 1.5 Watt Power Amplifier

Advance Product Information
27- 32 GHz 1.5 Watt Power Amplifier
TGA1082B
Prototype Part #, Production Part # TBD
Key Features
• 0.25 um pHEMT Technology
• 22 dB Nominal Gain at 30GHz
• 1W Nominal Pout @ P1dB
• 1.5W Psat at 30GHz
• Bias 6 - 7V @ 960 mA
• Chip Dimensions 4.13mm x 3.3mm
The TriQuint TGA1082B-EPU is a three stage
HPA MMIC design using TriQuint’s proven
0.25 um Power pHEMT process. The TGA1082B
is designed to support a variety of millimeter wave
applications including point-to-point digital radio
and LMDS/LMCS and Ka band satellite ground
terminals.
The TGA1082B provides 30 dBm nominal
output power at 1dB compression across
27-32GHz. Typical small signal gain is 22 dB
at 30GHz.
The TGA1082B requires minimum off-chip
components. Each device is 100% DC and RF
tested on-wafer to ensure performance
compliance. The device is available in chip form.
Primary Applications
• Point-to-Point Radio
• Point-to-Multipoint Communications
• Ka Band Sat-Com
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Frequency (GHz)
32
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26
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32
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com
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