TGA1073C Datasheet, PDF (1/6 Pages) TriQuint Semiconductor – 36 - 40 GHz Power Amplifier

Product Datasheet
August 15, 2000
36 - 40 GHz Power Amplifier
TGA1073C-SCC
Key Features and Performance
• 0.25um pHEMT Technology
• 36-40 GHz Frequency Range
• 26 dBm Nominal Pout @ P1dB, 38GHz
• 15 dB Nominal Gain
• Bias 5-7V @ 240 mA
• Chip Dimensions 2.4 mm x 1.45 mm
Primary Applications
• Point-to-Point Radio
The TriQuint TGA1073C-SCC is a two stage PA MMIC ^•
design using TriQuint’s proven 0.25 µm Power pHEMT
process to support a variety of millimeter wave
applications including point-to-point digital radio and
point-to-multipoint systems.
The two-stage design consists of two 400 µm input
devices driving four 400 µm output devices.
Point-to-Multipoint Radio
TGA1073C Typical RF Performance (Fixtured)
20
15
S21
10
5
The TGA1073C provides 24 dBm of output power at
1dB gain compression and 26 dBm saturated output
power across the 36-40 GHz with a typical small signal
gain of 15 dB.
The TGA1073C requires a minimum of off-chip
components. Each device is 100% DC and RF tested
on-wafer to ensure performance compliance. The
device is available in chip form.
0
-5
-10
S22
-15
-20
S11
-25
33 34 35 36 37 38 39 40 41 42 43
Frequency (GHz)
Typical Performance, 36-40 GHz
Parameter
Small Signal Gain
Gain Flatness
Output P1dB
Saturated Output Power
Saturated PAE
Output OTOI
IMR3 @ SCL = P1dB - 10dB
Input Return Loss
Output Return Loss
Reverse Isolation
Quiescent Current
Unit +5VSupply +6VSupply +7VSupply
dB
15
dBpp
1
dBm
24
25
26
dBm
26
27
28
%
23
22
20
dBm
34
dBc
34
dB
-10
dB
-8
dB
-35
mA
225
240
260
TGA1073C Typical RF Performance (Fixtured)
33
30
P1dB
27
24
21
VD = +5V, +6V, +7V
18
15
12
IMR3 @ VD = +6V
9
6
3
36
37
38
39
40
41
Frequency (GHz)
50
48
46
44
42
40
38
36
34
32
30
42
TriQuint Semiconductor Texas : [phone] Fax [phone] Web: www.triquint.com
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