TGA1055 Datasheet, PDF (1/3 Pages) TriQuint Semiconductor – Ka Band 2 Watt Power Amplifier

Advance Product Information
Ka Band 2 Watt Power Amplifier
TGA1055-EPU
Key Features and Performance
• 0.25 um pHEMT Technology
• 20 dB Nominal Gain
• 2W Nominal Pout
• -30 dBc IMR3 @ 26 dBm SCL
• Bias 7V @ 1.4 A
• Chip Dimensions 5.89 mm x 3.66 mm
EG1055B
Bias Testing: Vd=7V, Id=1.38A, T=25C, Freq=29GHz
35
20
33
18
31
16
29
14
27
12
Pout
25
10
Gain
PAE
23
8
21
6
19
4
17
2
15
0
5
6
7
8
9
10
11
12
13
14
15
Input Power (dBm )
Preliminary Pout, Gain and PAE Data at 29GHz
Primary Applications
• LMDS
• Point-to-Point Radio
• Satellite Ground Terminal
Release Status
• Currently shipping Engineering
Prototype Units
Chip Dimensions 5.89 mm x 3.66 mm
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com
11