T2G6000528-Q3_15 Datasheet, PDF (1/13 Pages) TriQuint Semiconductor – 10W, 28V DC 6 GHz, GaN RF Power Transistor

T2G6000528-Q3
10W, 28V DC – 6 GHz, GaN RF Power Transistor
Applications
• Military radar
• Civilian radar
• Professional and military radio communications
• Test instrumentation
• Wideband or narrowband amplifiers
• Jammers
Product Features
• Frequency: DC to 6 GHz
• Output Power (P3dB): 10 W at 3.3 GHz
• Linear Gain: >17 dB at 3.3 GHz
• Operating Voltage: 28 V
• Low thermal resistance package
Functional Block Diagram
1
2
General Description
The TriQuint T2G6000528-Q3 is a 10W (P3dB) discrete
GaN on SiC HEMT which operates from DC to 6 GHz.
The device is constructed with TriQuint’s proven
TQGaN25 production process, which features advanced
field plate techniques to optimize power and efficiency at
high drain bias operating conditions. This optimization can
potentially lower system costs in terms of fewer amplifier
line-ups and lower thermal management costs.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Pin Configuration
Pin No.
1
2
Flange
Label
VD / RF OUT
VG / RF IN
Source
Ordering Information
Part
ECCN
T2G6000528-Q3 EAR99
T2G6000528-Q3-
EVB3
EAR99
T2G6000528-Q3-
EVB5
EAR99
T2G6000528-Q3-
EVB6
EAR99
T2G6000528-Q3-
EVB1
EAR99
Description
Packaged part
Flangeless
3.0-3.5 GHz
Evaluation Board
3.8-4.2 GHz
Evaluation Board
5.8 GHz
Evaluation Board
1.9 – 2.7 GHz
Evaluation Board
Datasheet: Rev C 11-14-14
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Disclaimer: Subject to change without notice
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