T2G4005528-FS_15 Datasheet, PDF (1/13 Pages) TriQuint Semiconductor – 55W, 28V DC 3.5 GHz, GaN RF Power Transistor

T2G4005528-FS
55W, 28V DC – 3.5 GHz, GaN RF Power Transistor
Applications
• Military radar
• Civilian radar
• Professional and military radio communications
• Test instrumentation
• Wideband or narrowband amplifiers
• Jammers
Product Features
• Frequency: DC to 3.5 GHz
• Output Power (P_3dB): 64 W at 3.3 GHz
• Linear Gain: 16 dB at 3.3 GHz
• Operating Voltage: 28 V
• Low thermal resistance package
Functional Block Diagram
General Description
The TriQuint T2G4005528-FS is a 55 W (P_3dB) discrete
GaN on SiC HEMT which operates from DC to 3.5 GHz.
The device is constructed with TriQuint’s proven
TQGaN25 production process, which features advanced
field plate techniques to optimize power and efficiency at
high drain bias operating conditions. This optimization
can potentially lower system costs in terms of fewer
amplifier line-ups and lower thermal management costs.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Pin Configuration
Pin No.
1
2
Flange
Label
V_D / RF OUT
V_G / RF IN
Source
Ordering Information
Part
ECCN
T2G4005528-FS EAR99
T2G4005528-FS-
EVB1
EAR99
T2G405528-FS-
EVB2
EAR99
Description
Packaged part
Flangeless
3.0-3.5 GHz
Evaluation Board
1.0 – 1.4 GHz
Evaluation Board
Datasheet: Rev B 06-12-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
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