T1G6001528-Q3 Datasheet, PDF (1/15 Pages) TriQuint Semiconductor – DC – 6 GHz 18 W GaN RF Power Transistor

T1G6001528-Q3
DC – 6 GHz 18 W GaN RF Power Transistor
Applications
• General Purpose RF Power
• Jammers
• Military and Civilian Radar
• Professional and Military radio systems
• Wideband amplifiers
• Test instrumentation
• Avionics
Product Features
• Frequency: DC to 6 GHz
• Output Power (P3dB): 18 W at 6 GHz
• Linear Gain: >10 dB at 6 GHz
• Operating Voltage: 28 V
• Low thermal resistance package
Functional Block Diagram
1
2
General Description
The TriQuint T1G6001528-Q3 is a 18 W (P3dB)
discrete GaN on SiC HEMT which operates from DC
to 6 GHz and typically provides >10 dB gain at 6 GHz.
The device is constructed with TriQuint’s proven 0.25
μm process, which features advanced field plate
techniques to optimize power and efficiency at high
drain bias operating conditions. This optimization can
potentially lower system costs in terms of fewer
amplifier line-ups and lower thermal management costs.
Lead-free and RoHS compliant
Evaluation Boards are available upon request.
Pin Configuration
Pin #
1
2
Flange
Symbol
Vd/RF OUT
Vg/RF IN
Source
Ordering Information
Preliminary Data Sheet: Rev - A 06/14/2011
© 2011 TriQuint Semiconductor, Inc.
Part No.
ECCN Description
T1G6001528-Q3
EAR99 Packaged Transistor
T1G6001528-Q3 EVB1 EAR99 5-6 GHz Eval Board
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Disclaimer: Subject to change without notice
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