T1G4012036-FS_15 Datasheet, PDF (1/13 Pages) TriQuint Semiconductor – 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor

T1G4012036-FS
120W Peak Power, 24W Average Power,
36V DC – 3.5 GHz, GaN RF Power Transistor
Applications
 Military radar
 Civilian radar
 Professional and military radio communications
 Test instrumentation
 Wideband or narrowband amplifiers
 Jammers
Product Features
 Frequency: DC to 3.5 GHz
 Output Power (P3dB): 120 W Peak
(24 Watts Avg.) at 3.3 GHz
 Linear Gain: >15 dB at 3.3 GHz
 Operating Voltage: 36 V
 Low thermal resistance package
Functional Block Diagram
General Description
The TriQuint T1G4012036-FS is a 120 W Peak (24 W
Avg.) (P3dB) discrete GaN on SiC HEMT which operates
from DC to 3.5 GHz. The device is constructed with
TriQuint’s proven TQGaN25HV process, which features
advanced field plate techniques to optimize power and
efficiency at high drain bias operating conditions. This
optimization can potentially lower system costs in terms
of fewer amplifier line-ups and lower thermal
management costs.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Pin Configuration
Pin No.
1
2
Flange
Label
VD / RF OUT
VG / RF IN
Source
Ordering Information
Part
T1G4012036-FS
T1G4012036-FS-
EVB1
ECCN Description
3A001.b.3.a
Packaged part
Flangeless
EAR99
3.1-3.5 GHz
Evaluation Board
Datasheet: Rev B 02-24-15
© 2013 TriQuint
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Disclaimer: Subject to change without notice
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