T1G4005528-FS_15 Datasheet, PDF (1/12 Pages) TriQuint Semiconductor – 55W, 28V, DC – 3.5GHz, GaN RF Power Transistor

T1G4005528-FS
55W, 28V, DC – 3.5GHz, GaN RF Power Transistor
Applications
• Military radar
• Civilian radar
• Professional and military radio communications
• Test instrumentation
• Avionics
• Wideband or narrowband amplifiers
Product Features
• Frequency Range: DC to 3.5 GHz
• Linear Gain: >15 dB at 3.5 GHz
• Operating Voltage: 28 V
• Output Power (P_3dB): 55 W at 3.5 GHz
• Lead-free and RoHS compliant
Functional Block Diagram
General Description
The TriQuint T1G4005528-FS is a 55 W (P_3dB) discrete
GaN on SiC HEMT which operates from DC to 3.5
GHz. The device is constructed with TriQuint’s proven
0.25um production process, which features advanced
field plate techniques to optimize power and efficiency
at high drain bias operating conditions. This
optimization can potentially lower system costs in
terms of fewer amplifier line-ups and lower thermal
management costs.
Pin Configurations
Pin No.
1
2
Flange
Symbol
RF Output
RF Input
Source
Datasheet: Rev E 02-21-13
© 2013 TriQuint
Ordering Information
Part
ECCN Description
T1G4005528-FS
EAR99
Packaged part:
Flangeless
T1G4005528-FS-EVB1 EAR99
3.0-3.5 GHz
Evaluation Board
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Disclaimer: Subject to change without notice
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