T1G4004532-FL_15 Datasheet, PDF (1/13 Pages) TriQuint Semiconductor – 45W, 32V DC – 3.5 GHz, GaN RF Power Transistor

T1G4004532-FL
45W, 32V DC – 3.5 GHz, GaN RF Power Transistor
Applications
• Military radar
• Civilian radar
• Professional and military radio communications
• Test instrumentation
• Wideband or narrowband amplifiers
• Jammers
Product Features
• Frequency: DC to 3.5 GHz
• Output Power (P_3dB): 45 W at 3.3 GHz
• Linear Gain: >19 dB at 3.3 GHz
• Operating Voltage: 32 V
• Low thermal resistance package
Functional Block Diagram
General Description
The TriQuint T1G4004532-FL is a 45W (P_3dB) discrete
GaN on SiC HEMT which operates from DC to 3.5 GHz.
The device is constructed with TriQuint’s proven
TQGaN25 process, which features advanced field plate
techniques to optimize power and efficiency at high drain
bias operating conditions. This optimization can
potentially lower system costs in terms of fewer amplifier
line-ups and lower thermal management costs.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Pin Configuration
Pin No.
1
2
Flange
Label
V_D / RF OUT
V_G / RF IN
Source
Datasheet: RevA
© 2014 TriQuint
Ordering Information
Part
ECCN
T1G4004532-FL EAR99
T1G4004532-FL-
EVB1
EAR99
Description
Packaged part
Flanged
2.7-3.5 GHz
Evaluation Board
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Disclaimer: Subject to change without notice
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