T1G2028536-FL_15 Datasheet, PDF (1/13 Pages) TriQuint Semiconductor – 285W, 36V DC – 2 GHz, GaN RF Power Transistor

T1G2028536-FL
285W, 36V DC – 2 GHz, GaN RF Power Transistor
Applications
• Military radar
• Civilian radar
• Professional and military radio communications
• Test instrumentation
• Wideband or narrowband amplifiers
• GPS Communications
• Avionics
Product Features
• Frequency: DC to 2.0 GHz
• Output Power (P_3dB): 260 W at 1.2 GHz
• Linear Gain: 18 dB at 1.2 GHz
• Operating Voltage: 36 V
• Low thermal resistance package
Functional Block Diagram
General Description
The TriQuint T1G2028536-FL is a 285 W (P_3dB) discrete
GaN on SiC HEMT which operates from DC to 2 GHz.
The device is constructed with TriQuint’s proven
TQGaN25HV process, which features advanced field
plate techniques to optimize power and efficiency at high
drain bias operating conditions. This optimization can
potentially lower system costs in terms of fewer amplifier
line-ups and lower thermal management costs.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Pin Configuration
Pin No.
1
2
Flange
Label
V_D / RF OUT
V_G / RF IN
Source
Ordering Information
Part
ECCN
T1G2028536-FL EAR99
T1G2028536-FL-
EVB1
EAR99
Description
Packaged part
Flanged
1.2 – 1.4 GHz
Evaluation Board
Datasheet: Rev A 10-17-13
© 2013 TriQuint
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Disclaimer: Subject to change without notice
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