QPD1014 Datasheet, PDF (1/21 Pages) TriQuint Semiconductor – GaN RF Input-Matched Transistor

QPD1014
15W, 50V, 30 – 1200 MHz, GaN RF Input-Matched Transistor
General Description
The QPD1014 is a 15W (P3dB), 50Ω-input matched
discrete GaN on SiC HEMT which operates from 30MHz to
1200MHz on a 50V supply rail. The integrated input
matching network enables wideband gain and power
performance, while the output can be matched on board to
optimize power and efficiency for any region within the
band. It is ideally suited for basestation, radar and
communications applications and can support both CW and
pulsed mode of operations.
The device is housed in a 6 x 5 mm surface mount DFN
package.
Functional Block Diagram
8 Pin DFN (6 x 5 x 0.85 mm)
Product Features
 Frequency: 30 to 1200 MHz
 Output Power (P3dB): 12.5 W¹
 Linear Gain: 18.4 dB¹
 Typical PAE3dB: 69.5%¹
 Operating Voltage: 50 V
 Low thermal resistance package
 CW and Pulse capable
 6 x 5 mm package
Note 1: @ 1 GHz (Loadpull)
Applications
 Basestation
 Active Antenna
 Military radar
 Civilian radar
 Land mobile and military radio communications
 Jammers
Rev. A
© 2016 Qorvo
Ordering info
Part No.
ECCN Description
QPD1014
EAR99 30 –1200 MHz RF Transistor
QPD1014S2
EAR99 30 –1200MHz RF Transistor Sample
QPD1014EVB01 EAR99 30 –1000MHz EVB
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Disclaimer: Subject to change without notice
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