QPD0050 Datasheet, PDF (1/9 Pages) TriQuint Semiconductor – 75 W, DC to 3.6 GHz 48V GaN RF Power Transistor

Applications
• W-CDMA / LTE
• Macrocell Base Station Driver
• Microcell Base Station
• Small Cell Final Stage
• Active Antenna
• General Purpose Applications
QPD0050
75 W, DC to 3.6 GHz 48V GaN RF Power Transistor
6 Pin 7.2x6.6mm DFN
Product Features
• Operating Frequency Range: DC to 3.6 GHz
• Operating Drain Voltage: 48 V
• Maximum Output Power (PSAT): 82.8 W at 2.6 GHz
• Maximum Drain Efficiency: 78.5% at 2.6 GHz
• Efficiency-Tuned P3dB Gain: 19.4 dB at 2.6 GHz
• Surface Mount Plastic Package
Functional Block Diagram
General Description
The QPD0050 is a wide band over-molded QFN discrete
power amplifier. The device is a single stage unmatched
power amplifier transistor.
The QPD0050 can be used in Doherty architecture for
the final stage of a base station power amplifier for small
cell, microcell, and active antenna systems. The
QPD0050 can also be used as a driver in a macrocell
base station power amplifier.
Pin Configuration
Pin No.
1,2,3
4,5,6
Backside Paddle
Label
RF IN, VG
RF OUT, VD
RF/DC Ground
The wide bandwidth of the QPD0050 makes it suitable
for many different applications from DC to 3.6 GHz.
QPD0050 can deliver PSAT of 82 W at 48 V operation at
2.6 GHz.
Lead-free and ROHS compliant.
Ordering Information
Part No. ECCN
QPD0050 EAR99
Description
75 W 48 V DC-3.6 GHz
GaN RF Power Transistor
Preliminary Datasheet: Rev 03-21-16
© 2016 TriQuint Semiconductor, Inc
- 1 of 9 -
Disclaimer: Subject to change without notice
www.triquint.com / www.qorvo.com