QPD0030 Datasheet, PDF (1/8 Pages) TriQuint Semiconductor – 45 W, DC to 4 GHz 48V GaN RF Power Transistor

Applications
• W-CDMA / LTE
• Macrocell Base Station Driver
• Microcell Base Station
• Small Cell Final Stage
• Active Antenna
• General Purpose Applications
QPD0030
45 W, DC to 4 GHz 48V GaN RF Power Transistor
20 Pin 3x4mm QFN
Product Features
• Operating Frequency Range: DC to 4 GHz
• Operating Drain Voltage: 48 V
• Maximum Output Power (PSAT): 49 W
• Maximum Drain Efficiency: 72.5%
• Efficiency-Tuned P3dB Gain: 21.7 dB
• Surface Mount Plastic Overmold package
Functional Block Diagram
General Description
The QPD0030 is a wide band over-molded QFN discrete
power amplifier. The device is a single stage unmatched
power amplifier transistor.
The QPD0030 can be used in Doherty architecture for
the final stage of a base station power amplifier for small
cell, microcell, and active antenna systems. The
QPD0030 can also be used as a driver in a macrocell
base station power amplifier.
Pin Configuration
Pin No.
2, 3, 4, 5
12, 13, 14, 15
1, 6-11, 16-20
Backside Paddle
Label
RF IN, VG
RF OUT, VD
N/C
RF/DC Ground
The wide bandwidth of the QPD0030 makes it suitable
for many differenct applications from DC to 4 GHz.
QPD0030 can deliver PSAT of 49 W at 48 V operation.
Lead-free and ROHS compliant.
Ordering Information
Part No. ECCN
QPD0030 EAR99
Description
45W DC to 4 GHz
Preliminary Datasheet: Rev 03-18-16
© 2016 TriQuint Semiconductor, Inc
- 1 of 8 -
Disclaimer: Subject to change without notice
www.triquint.com / www.qorvo.com