QPA1013D Datasheet, PDF (1/15 Pages) TriQuint Semiconductor – 6 – 18GHz 10W GaN Power Amplifier

Applications
 Test Instrumentation
 Electronic Warfare (EW)
 Radar
 Communications
QPA1013D
6 – 18GHz 10W GaN Power Amplifier
Product Features
 Frequency Range: 6 – 18GHz
 P_OUT: >40dBm @ PIN = 20dBm
 PAE: >20% @ PIN = 20dBm
 Large Signal Gain: >20dB @ PIN = 20dBm
 Small Signal Gain: >25dB
 Return Loss: >6.5dB
 Bias: V_D = 20V, I_DQ = 1250mA, V_G = -2.4V Typical
 Chip Dimensions: 5.05 x 3.55 x 0.10 mm
Functional Block Diagram
General Description
Pad Configuration
Qorvo’s QPA1013D is a broadband high power MMIC
amplifier fabricated on Qorvo’s production 0.15um GaN
on SiC process (QGAN15). The QPA1013D operates
from 6 – 18GHz and provides more than 10W saturated
output power with power-added efficiency >20% and
large-signal gain >20 dB. This combination of wideband
performance provides the flexibility designers are looking
for to improve system performance while reducing size
and cost.
The QPA1013D is matched to 50Ω with integrated DC
blocking capacitors on both RF I/O ports simplifying
system integration. The broadband performance makes it
ideally suited in support of test instrumentation and
electronic warfare, as well as, supporting multiple radar
and communication bands.
The QPA1013D is 100% DC and RF tested on-wafer to
ensure compliance to electrical specifications.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad No.
1
2, 12
3, 11
4, 10
5, 9
6, 8
7
Symbol
RF In
V_G12
V_D1
V_D2
V_G3
V_D3
RF Out
Ordering Information
Part
QPA1013D
ECCN Description
3A001.b.2.c
6 – 18GHz 10W GaN
Power Amplifier
Datasheet: Rev B 03-28-16
© 2016 TriQuint
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Disclaimer: Subject to change without notice
www.triquint.com, www.qorvo.com