QPA1011D Datasheet, PDF (1/26 Pages) TriQuint Semiconductor – 25 W GaN Power Amplifier

QPA1011D
7.9 – 11.0 GHz 25 W GaN Power Amplifier
Product Description
Qorvo’s QPA1011D is a X-band high power MMIC amplifier
fabricated on Qorvo’s production 0.15um GaN on SiC
process (QGaN15). The QPA1011D operates from 7.9 – 11
GHz and typically provides 25 W saturated output power
with power-added efficiency of 37% and large-signal gain
of 20 dB. This combination of wideband performance
provides the flexibility designers are looking for to improve
system performance while reducing size and cost.
QPA1011D can also support a variety of operating
conditions to best support system requirements. With good
thermal properties, it can support a range of bias voltages
and will perform well under both CW and pulse operations.
The QPA1011D is matched to 50Ω with integrated DC
blocking capacitors on both RF I/O ports simplifying system
integration. The wideband performance and operational
flexibility allows it support satellite communication and data
links, as well as, military and commercial radar systems.
The QPA1011D is 100% DC and RF tested on-wafer to
ensure compliance to electrical specifications.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Functional Block Diagram
Product Features
 Frequency Range: 7.9 – 11 GHz
 POUT: 45 dBm at PIN = 25 dBm
 PAE: 37 % at PIN = 25 dBm
 Large Signal Gain: 20 dB at PIN = 25 dBm
 Small Signal Gain: 26 dB
 Integrated Power Detector
 Bias: VD = 24 V, IDQ = 1200 mA, VG = −2.0 V Typical
 Pulsed VD: PW =100 µS, DC = 10%
 Chip Dimensions: 2.75 x 3.12 x 0.10 mm
Performance is typical across frequency. Please
reference electrical specification table and data plots for
more details.
Applications
 Satellite Communications
 Data Links
 Military and Commercial Radar
Ordering Information
Part No. ECCN Description
QPA1011D
3A001.b.2.b.2
7.9 – 11 GHz 25 W GaN Power
Amplifier
Data Sheet Rev. C, December 20, 2016 | Subject to change without notice
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