QPA1010 Datasheet, PDF (1/24 Pages) TriQuint Semiconductor – 15 W GaN Power Amplifier

QPA1010
7.9 – 11.0 GHz 15 W GaN Power Amplifier
Product Description
Qorvo’s QPA1010 is a X-band high power MMIC amplifier
fabricated on Qorvo’s production 0.15um GaN on SiC
process (QGaN15). The QPA1010 operates from 7.9 – 11
GHz and typically provides 15 W saturated output power
with power-added efficiency of 38% and large-signal gain
of 18 dB. This combination of wideband performance
provides the flexibility designers are looking for to improve
system performance while reducing size and cost.
QPA1010 can also support a variety of operating conditions
to best support system requirements. With good thermal
properties, it can support a range of bias voltages and will
perform well under both CW and pulse operations.
The QPA1010 is matched to 50Ω with integrated DC
blocking capacitors on both RF I/O ports simplifying system
integration. The wideband performance and operational
flexibility allows it support satellite communication and data
links, as well as, military and commercial radar systems.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Product Features
• Frequency Range: 7.9 – 11 GHz
• POUT: 42 dBm at PIN = 24 dBm
• PAE: 38 % at PIN = 24 dBm
• Large Signal Gain: 18 dB at PIN = 24 dBm
• Small Signal Gain: 25 dB
• Integrated Power Detector
• Bias: VD = 24 V, IDQ = 600 mA, VG = −1.8 V Typical
• Pulsed VD: PW =100 µS, DC = 10%
• Package Dimensions: 4.5 x 5.0 x 1.72 mm
Functional Block Diagram
Performance is typical across frequency. Please
reference electrical specification table and data plots for
more details.
Applications
• Satellite Communications
• Data Links
• Military and Commercial Radar
Data Sheet Rev. D, March 10, 2017 | Subject to change without notice
Ordering Information
Part No. ECCN Description
QPA1010
3A001.b.2.b.2
7.9 – 11 GHz 15 W GaN Power
Amplifier
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