QPA1003P Datasheet, PDF (1/20 Pages) TriQuint Semiconductor – 1 – 8 GHz 10 W GaN Power Amplifier

QPA1003P
1 – 8 GHz 10 W GaN Power Amplifier
Product Description
Qorvo’s QPA1003P is a wideband high power MMIC
amplifier fabricated on Qorvo’s production 0.15um GaN on
SiC process (QGaN15). The QPA1003P operates from 1
– 8 GHz and typically provides 10 W saturated output
power with power-added efficiency of 30% and large-signal
gain of 25 dB. This combination of wideband performance
provides the flexibility designers are looking for to improve
system performance while reducing size and cost.
The QPA1003P is matched to 50Ω with integrated DC
blocking capacitors on both RF I/O ports simplifying system
integration. The wideband performance makes it ideally
suited in support of test instrumentation and electronic
warfare, as well as, supporting multiple radar and
communication bands.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Product Features
 Frequency Range: 1 – 8 GHz
 POUT: 40 dBm @ PIN = 15 dBm
 PAE: 30 % @ PIN = 15 dBm
 Large Signal Gain: 25 dB @ PIN = 15dBm
 Small Signal Gain: 30 dB
 Bias: VD = +28 V, IDQ = 650 mA, VG = −2.2 V Typical
 Package Dimensions: 5 x 6 x 1.76 mm
 Process Technology: QGaN15
Functional Block Diagram
Performance is typical across frequency. Please
reference electrical specification table and data plots for
more details.
Applications
 Electronic Warfare (EW)
 Radar
 Communications
 Test Instrumentation
Data Sheet Rev. A August 11, 2016
Ordering Information
Part No.
QPA1003P
ECCN
Description
3A001.b.2.b.1
1 – 8 GHz 10 W GaN Power
Amplifier
- 1 of 20 -
www.qorvo.com