QPA1003D Datasheet, PDF (1/21 Pages) TriQuint Semiconductor – 1 – 8 GHz 10 W GaN Power Amplifier

QPA1003D
1 – 8 GHz 10 W GaN Power Amplifier
Product Description
Qorvo’s QPA1003D is a wideband high power MMIC
amplifier fabricated on Qorvo’s production 0.15um GaN on
SiC process (QGaN15). The QPA1003D operates from 1
– 8 GHz and typically provides 10 W saturated output
power with power-added efficiency of 30% and large-signal
gain of 25 dB. This combination of wideband performance
provides the flexibility designers are looking for to improve
system performance while reducing size and cost.
The QPA1003D is matched to 50Ω with integrated DC
blocking capacitors on both RF I/O ports simplifying system
integration. The wideband performance makes it ideally
suited in support of test instrumentation and electronic
warfare, as well as, supporting multiple radar and
communication bands.
The QPA1003D is 100% DC and RF tested on-wafer to
ensure compliance to electrical specifications.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Functional Block Diagram
2
3
1
4
Product Features
 Frequency Range: 1 – 8 GHz
 POUT: 40 dBm @ PIN = 15 dBm
 PAE: 30 % @ PIN = 15 dBm
 Large Signal Gain: 25 dB @ PIN = 15dBm
 Small Signal Gain: 30 dB
 Bias: VD = +28 V, IDQ = 650 mA, VG = −2.2 V Typical
 Chip Dimensions: 3.3 x 3.55 x 0.10 mm
 Process Technology: QGaN15
Performance is typical across frequency. Please
reference electrical specification table and data plots for
more details.
Applications
 Electronic Warfare (EW)
 Radar
 Communications
 Test Instrumentation
Data Sheet Rev. B July 5, 2016
Ordering Information
Part No.
QPA1003D
ECCN
Description
3A001.b.2.b.1
1 – 8 GHz 10 W GaN Power
Amplifier
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