HFET2MI Datasheet, PDF (1/6 Pages) TriQuint Semiconductor – 0.5-μm HFET 2MI

0.5-µm HFET 2MI
Process Data Sheet
4.6 µm PLATING
CAP TOP PLATE
2000 Å NITRIDE
0.75 µm FIRST METAL
TaN RESISTOR
GATE
ACTIVE REGION
OHMIC METAL (EXCEPT VIA)
SEMI-INSULATING GaAs SUBSTRATE
VIA UNDER CAP
0.5-µm 2MI Process Cross Section
General Description
The 0.5-µm Heterostructure FET (HFET) process is a de-
pletion-mode 2MI (2-metal-interconnect) process for appli-
cations through 20 GHz. The HFET I-V characteristics pro-
vide for high power, high linearity, extraordinary transcon-
ductance uniformity and high breakdown voltages. Passives
include 2 thick-metal interconnect layers, precision TaN
resistors, GaAs resistors, MIM capacitors and through-
substrate vias. The capacitor-over-via process aides in size
compaction and offers excellent grounds at higher frequen-
cies.
Features
• 0.5-µm amplifier transistors
• 0.5-µm switch transistors
• 0.5-µm diodes
• Device passivation
• High-Q passives
• MIM capacitors
• TaN resistors
• GaAs resistors
• 2 metal layers
• Air bridges
• Substrate vias
• Operation up to V_d = 10 V
Applications
• Up to 20 GHz
• Communications
• Space
• Military
• Power amplifiers
• Driver amplifiers
• AGC amplifiers
• Limiting amplifiers
• Transimpedance amplifiers
• Differential amplifiers
500 West Renner Road
Richardson, Texas 75080
Semiconductors for Communications, Space and Military
www.TriQuint.com
Page 1 of 6; 1/30/06
Specifications are subject to change.
Phone: [phone]
Foundry: 972-994-4545
Email: [e-mail]