ECG006F_15 Datasheet, PDF (1/4 Pages) TriQuint Semiconductor – InGaP HBT Gain Block

ECG006F
InGaP HBT Gain Block
Product Features
 DC – 4.5 GHz
 15 dB Gain @ 1 GHz
 +15.5 dBm P1dB @ 1 GHz
 +32 dBm OIP3 @ 1 GHz
 3.7 dB Noise Figure
 Internally matched to 50 
 Robust 1000V ESD, Class 1C
 Lead-free/RoHS-compliant, SOT-
363 Package
Applications
 Mobile Infrastructure
 CATV / FTTX
 WLAN / ISM
 RFID
 WiMAX / WiBro
Product Description
The ECG006F is a general-purpose buffer amplifier that
offers high dynamic range in a low-cost surface-mount
package. At 1000 MHz, the ECG006F typically provides
15 dB of gain, +32 dBm Output IP3, and +15.5 dBm
P1dB.
Functional Diagram
GND ₁
GND 2
6 RF OUT
5 GND
The ECG006F consists of a Darlington-pair amplifier
using the high reliability InGaP/GaAs HBT process
technology and only requires DC-blocking capacitors, a
bias resistor, and an inductive RF choke for operation.
The device is ideal for wireless applications and is
available in low-cost, surface-mountable plastic lead-
free/RoHS-compliant SOT-363 packages. All devices
are 100% RF and DC tested.
RF IN 3
Function
Input
Output/Bias
Ground
4 GND
Pin No.
3
6
1, 2, 4, 5
The broadband MMIC amplifier can be directly applied
to various current and next generation wireless
technologies such as GPRS, GSM, CDMA, and W-
CDMA. In addition, the ECG006F will work for other
various applications within the DC to 4.5 GHz frequency
range such as CATV and mobile wireless.
Specifications ⁽¹⁾
Parameter
Operational Bandwidth
Test Frequency
Gain
Output P1dB
Output IP3 ⁽²⁾
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 ⁽²⁾
Noise Figure
Device Voltage
Device Current
Units
MHz
MHz
dB
dBm
dBm
MHz
dB
dB
dB
dBm
dBm
dB
V
mA
Min
DC
13.8
+12
3.5
Typ
1000
15.5
+15.5
+32
2000
15
14
14
+15
+32
4.0
3.9
45
Max
4500
17.2
4.3
Typical Performance ⁽¹⁾
Parameter
Frequency
S21
S11
S22
Output P1dB
Output IP3 ⁽²⁾
Noise Figure
Units
MHz
dB
dB
dB
dBm
dBm
dB
500
15.6
-15
-13
+15.8
+32
3.7
Typical
900 1900
15.5 14.8
-16.5 -14
-14 -13.5
+15.4 +15
+32 +30
3.7 3.7
2140
14.7
-14
-13.5
+15
+30
3.7
Not Recommended for
New Designs
1. Test conditions unless otherwise noted: 25º C, Supply Voltage = +5 V, Rbias = 24.3 , 50  System.
2. 3OIP measured with two tones at an output power of +2 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Recommended Replacement
Part: TQP369181
Absolute Maximum Rating
Parameter
Storage Temperature
Device Current
RF Input Power (continuous)
Thermal Resistance, Rth
For 10⁶ hours MTTF
Junction Temperature
Junction Temperature for >10⁶ hours MTTF
Rating
-55 to +150 C
150 mA
+12 dBm
233 C/W
+160 C
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information
Part No.
Description
ECG006F-G
InGaP HBT Gain Block
(lead-free/RoHS-compliant SOT-363 package)
Standard T/R size = 3000 pieces on a 7” reel.
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc  Phone [phone]  FAX: [phone]  e-mail: [e-mail]  Web site: www.TriQuint.com
Page 1 of 4 March 2012