EC1089_15 Datasheet, PDF (1/5 Pages) TriQuint Semiconductor – Watt, High Linearity InGaP HBT Amplifier

EC1089
¼ Watt, High Linearity InGaP HBT Amplifier
Product Features
• 10 – 2500 MHz
• +24 dBm P1dB
• +41 dBm OIP3
• 15.5 dB Gain at 900 MHz
• 12.2 dB Gain at 1900 MHz
• Lead-free/Green/RoHS
compliant SOT-89 Package
Applications
• Mobile Infrastructure
• Final stage amplifiers for
Repeaters
• Defense / Homeland Security
Product Description
The EC1089 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve high performance across a broad range with
+41 dBm OIP3 and +24 dBm of compressed 1dB power. It
is housed in an industry standard lead-free/green/RoHS-
compliant SOT-89 package. All devices are 100% RF and
DC tested.
The EC1089 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. An internal active bias allows the
EC1089 to maintain high linearity over temperature and
operate directly off a single +5 V supply. This combination
makes the device an excellent candidate for transceiver line
cards in current and next generation multi-carrier 3G base
stations.
Functional Diagram
GND
4
1
RF IN
2
GND
3
RF OUT
Function
Input
Output/Bias
Ground
Pin No.
1
3
2, 4
Specifications ⁽¹⁾
Parameters
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 ⁽²⁾
IS-95A Channel Power
@ -45 dBc ACPR
Noise Figure
Test Frequency
Gain
Output P1dB
Output IP3 ⁽²⁾
Operating Current Range
Device Voltage
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dB
MHz
dB
dBm
dBm
mA
V
Min
10
10.5
+40
140
Typ
1900
12.2
15
10
+23.5
+41
+17
5.9
2140
11.5
+23.5
+40
160
+5
Max
2500
175
1. Test conditions unless otherwise noted: 25 ºC, Supply Voltage = +5 V, 800 MHz in a tuned
application circuit.
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Typical Performance ⁽³⁾
Parameters
Frequency
S21 - Gain
S11 - Input R.L.
S22 - Output R.L.
Output P1dB
Output IP3
Noise Figure
Supply Bias
Units
MHz
dB
dB
dB
dBm
dBm
dB
Typical
900 1900 2140
15.5 12.2 11.5
-14
-15
-15
-10
-10
-10
+24 +23.5 +23.5
+40 +41 +40
5.1
5.9
5.4
+5 V @ 160 mA
3. Typical parameters reflect performance in a tuned application circuit: Supply Voltage = +5 V, I =
160 mA, +25 °C
Not Recommended For
New Designs
Recommended replacement parts:
TQP7M9101
Absolute Maximum Rating
Parameter
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Junction Temperature
Thermal Resistance
Rating
-65 to +150 °C
+18 dBm
+6 V
220 mA
+220 °C
149 °C / W
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information
Part No.
EC1089B-G
Description
¼ Watt, InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-89 Pkg)
Standard T/R size = 1000 pieces on a 7” reel.
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone [phone] • FAX: [phone] • e-mail: [e-mail] • Web site: www.TriQuint.com
Page 1 of 5 August 2011