CGB241 Datasheet, PDF (1/14 Pages) TriQuint Semiconductor – 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier

CGB241
Data Sheet
2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier
Description:
The CGB241 GaAs Power Amplifier MMIC has been
especially developed for wireless applications in the
2.4 - 2.5 GHz ISM band (e.g. Bluetooth class 1, or
IEEE 802.11b). Its high power added efficiency (typi-
cally 50%) and single positive supply operation makes
the device ideally suited to handheld applications. The
device delivers 22.5 dBm output power at a supply volt-
age of 3.2 V, with an overall PAE of 50%. The output
power can be adjusted using an analog control voltage
(V_CTR). Simple external input-, interstage-, and output
matching circuits are used to adapt to the different re-
quirements of linearity and harmonic suppression in
various applications.
Features:
• 2-stage Bluetooth InGaP HBT power amplifier
• Single voltage supply
• Wide operating voltage range 2.0 - 5.5 V
• P_OUT = 22.5 dBm at V_C = 3.2 V
• Overall power added efficiency ( PAE ) typically
50%
• Analog power control with four power steps
• High PAE at low–power mode
• High harmonic suppression typ. 35 dBc
• Easy external matching concept
• Thin Small Leadless Package (A = 2.6mm²)
Applications:
• Bluetooth Class 1
• Home RF
• Cordless Phones
• IEEE 802.11b
• ISM-band Spread
Spectrum
Package Outline:
Pin Configuration:
1:
Vc1
2:
RFin
3:
NC
4:
Vcntrl1
5:
Vcntrl2
6:
Vc2
7 (paddle): GND
For further information please visit www.triquint.com
Rev. A; November 14th, 2005.
pg. 1/14