CGB240B Datasheet, PDF (1/19 Pages) TriQuint Semiconductor – 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier

CGB 240B
Datasheet
2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier
Description:
The CGB240B GaAs power amplifier MMIC has been
especially developed for wireless LAN applications in the
2.4 - 2.5 GHz ISM band, compliant with IEEE 802.11b
standards. The chip is also fully compliant with Bluetooth
class 1 applications and thus can be used in dual-mode
(Bluetooth/WLAN) applications, too.
While providing an effective channel power of 22dBm, the
ACPR is better than -33dB relative to the sinx/x spectral
peak of an IEEE802.11b–modulated TX signal. Each
CGB240B chip is individually tested for IP3, resulting in
guaranteed ACPR performance.
Applications:
• WLAN
• IEEE 802.11a
• Bluetooth Class 1
In a Bluetooth class 1 system, the CGB240B’s high power
added efficiency (up to 50%) and single positive supply
operation makes the device ideally suited for handheld
applications. The CGB240B delivers 23 dBm output power
at a supply voltage of 3.2 V, with an overall PAE of 50% in
saturated mode. The output power can be adjusted using
an analog control voltage (V_CTR). Simple external input-,
interstage-, and output matching circuits are used to adapt
to the different requirements of linearity and harmonic
suppression in various applications2-stage InGaP HBT
power amplifier for WLAN and Bluetooth applications.
Features:
Package Outline:
1
5
P-TSSOP-10-2
• Pout = +23dBm at 3.2 V
• ACPR / IP3 tested to be compliant with IEEE802.11b
standard
• Fully compliant with Bluetooth requirements (dual-mode
use)
• Single voltage supply
• Wide operating voltage range 2.0 - 5.5 V
• Analog power control with four power steps
• Easy external matching concept
Pin configuration:
1 & 2:
Vc1
3:
RFin
4, 5, & 10: NC
6:
Vcntrl1
7:
Vcntro2
8 & 9:
Vc2
11 (paddle) GND
For More Information, Please Visit www.triquint.com
Rev 1.3, July 14th, 2003
pg. 1/20