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| TA0104A Datasheet, PDF (3/18 Pages) Tripath Technology Inc. – STEREO 500W (4Ω) CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING (DPPTM) TECHNOLOGY | |||
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Tripath Technology, Inc. - Technical Information
Performance Characteristics â Single Ended, Vs = +90V
Unless otherwise specified, f = 1kHz, Measurement Bandwidth = 22kHz. TA = 25°C.
See Notes 1 & 2 for Operating Conditions and Test/Application Circuit Setup.
SYM BOL
PARAM ETER
POUT
Output Pow er
(Continuous Average/Channel)
THD + N
IHF-IM
Total Harmonic Distortion Plus
Noise
IHF Intermodulation Distortion
SNR
CS
PSRR
eNOUT
Signal-to-Noise Ratio
Channel Separation
Pow er Supply Rejection Ratio
Output Noise Voltage
CONDITIONS
THD+N = 0.1%, RL = 8â¦
RL = 4â¦
THD+N = 1%, RL = 8â¦
RL = 4â¦
POUT = 300W/Channel, RL = 8â¦
M IN.
19kHz, 20kHz, 1:1 (IHF), RL = 8â¦
POUT = 100W/Channel
A Weighted, POUT = 350W/Ch, RL = 8â¦
0dBr = 100W, RL = 8â¦
Input Referenced, 30kHz Bandw idth
A Weighted, no signal, input shorted, DC
offset nulled to zero
TYP.
350
500
450
750
0.02
0.02
100.5
85
65
500
M AX.
UNITS
W
W
W
W
%
%
dB
dB
dB
µV
Performance Characteristics â Single Ended, Vs = +75V
Unless otherwise specified, f = 1kHz, Measurement Bandwidth = 22kHz. TA = 25°C.
See Notes 1 & 2 for Operating Conditions and Test/Application Circuit Setup.
SYM BOL
PARAM ETER
POUT
Output Pow er
(Continuous Average/Channel)
THD + N
IHF-IM
Total Harmonic Distortion Plus
Noise
IHF Intermodulation Distortion
SNR
CS
PSRR
η
eNOUT
Signal-to-Noise Ratio
Channel Separation
Pow er Supply Rejection Ratio
Pow er Efficiency
Output Noise Voltage
CONDITIONS
THD+N = 0.1%, RL = 8â¦
RL = 4â¦
THD+N = 1%, RL = 8â¦
RL = 4â¦
POUT = 300W/Channel, RL = 4â¦
M IN.
19kHz, 20kHz, 1:1 (IHF), RL = 8â¦
POUT = 100W/Channel
A Weighted, POUT = 200W/Ch, RL = 8â¦
0dBr = 100W, RL = 8â¦, f = 1kHz
Input Referenced, 30kHz Bandw idth
POUT = 400W/Channel, RL = 8â¦
A Weighted, no signal, input shorted, DC
offset nulled to zero
TYP.
200
425
300
500
0.02
0.02
98
85
65
90
500
M AX.
UNITS
W
W
W
W
%
%
dB
dB
dB
%
µV
Minimum and maximum limits are guaranteed but may not be 100% tested.
Notes:
1) V5 = +5V, VN12 = +12V referenced to VSNEG
2) Test/Application Circuit Values:
D = MUR120T3 diodes, RIN = 22.1Kâ¦
RD = 33â¦, RS = 0.025â¦,ï RG = 5.6â¦
ROCR1 = ROCR2 = 0â¦, LF = 18uH (Amidon core T200-2)
CF = 0.22uF, CD = 0.1uF, CIN = 1uF, CBY = 0.1uF
Power Output MOSFETs, M = ST STW38NB20
BBMO=BBM1=1
3
TA104A â Rev. 3.1/06.00
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