TP2150B Datasheet, PDF (10/18 Pages) Tripath Technology Inc. – DUAL HIGH SIDE AND LOW SIDE MOSFET DRIVER

Tripath Technology, Inc. - Technical Information
D_D
D_S
R_PG
Q_B
D_SW
L_SW
C_SW
R_SWFB
C_SWFB
D_SB
C_SN
R_SN
Drain diode. This diode must be connected from the drain of the high side output
MOSFET to the drain of the low side output MOSFET. This diode absorbs any high
frequency overshoots caused by the output inductor L_O during high output current
conditions. In order for this diode to be effective it must be connected directly to the
drains of both the top and bottom side output MOSFET. A fast or ultra fast recovery
diode that can sustain the entire VPP-VNN voltage should be used here. In most
applications a 150V or greater diode must be used.
Source diode. This diode must be connected from the source of the high side
output MOSFET to the source of the low side output MOSFET. This diode absorbs
any high frequency undershoots caused by the output inductor L_O during high output
current conditions. In order for this diode to be effective it must be connected
directly to the sources of both the top and bottom sides output MOSFETs. A fast or
ultra fast recovery diode that can sustain the entire VPP-VNN voltage should be
used here. In most applications a 150V or greater diode must be used.
Gate resistor for the output MOSFET for the switchmode power supply. Controls
the rise time, fall time, and reduces ringing for the gate of the output MOSFET for
the switchmode power supply.
Output MOSFET for the switchmode power supply to generate the VN10. This
output MOSFET must be a P channel device.
Flywheel diode for the internal VN10 buck converter. This diode also prevents
VN10SW from going more than one diode drop negative with respect to VNN. This
diode should be a Shottky or ultrafast rectifier.
VN10 generator filter inductor. This inductor should be sized appropriately so that
L_SW does not saturate, and VN10 does not overshoot with respect to VNN during
TP2150B turn on.
VN10 generator filter capacitors. The high frequency capacitor (0.1uF) must be
located close to the VN10 pins (pin 41 and 43 of the TP2150B) to maximize device
performance. The bulk capacitor (100uF) should be sized appropriately such that
the VN10 voltage does not overshoot with respect to VNN during TP2150B turn on.
VN10 generator feedback resistor. This resistor sets the nominal VN10 voltage.
With R_SWFB equal to 1kΩ, the VN10 voltage generated will typically be 10V above
VNN.
VN10 generator feedback capacitor. This capacitor, in conjunction with R_SWFB, filters
the VN10 feedback signal such that the loop is unconditionally stable.
HOCOM diode. These diodes must be connected from the HOCOM pin (pin 37 or
pin 47 of the TP2150B) to the OCSHN pins (pin 34 or pin 50 of the TP2150B) and
the OCSLP pins (pin 30 or 54 of the TP2150B). This diode absorbs any high
frequency undershoots caused by the output inductor L_O during high output current
conditions and protects the TP2150B during these conditions. In order for this diode
to be effective it must be connected directly to the HOCOM, OCSHN, and OCSLP
pins of the TP2150B. A fast or ultra fast recovery diode that can sustain the entire
VPP-VNN voltage should be used here. In most applications a 150V or greater
diode must be used.
High frequency snubber capacitor works as a low pass filter in conjunction with R_SN
to remove high frequency ringing components due to over/undershoot on the output
switching waveform.
High frequency snubber resistor works as a low pass filter in conjunction with C_SN to
remove high frequency ringing components due to over/undershoot on the output
switching waveform.
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TP2150B - MC/ 1.7/06.04