TPC8A01_06 Datasheet, PDF (1/12 Pages) Toshiba Semiconductor – DC-DC CONVERTER Notebook PC Portable Machines and Tools

TPC8A01
Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－MOSⅢ)
Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON
N CHANNEL MOS TYPE(U－MOSⅢ)
TPC8A01
DC-DC CONVERTER
Notebook PC
Portable Machines and Tools
Unit: mm
• Includes Schottky Barrier Diode Type. (Q2)
Low Forward Voltage: VDSF=0.6V(Max.)
• Small footprint due to small and thin package.
• High Speed Switching.(Q1)
• Small Gate Charge.(Q1): Qg＝17nC(Typ.)
• Low drain-source ON resistance(Q2) RDS (ON) = 13 mΩ (typ.)
• High forward transfer admittance(Q2): |Yfs| = 11 S (typ.)
• Low leakage current. (Q1): IDSS = 10 µA(Max.) (VDS = 30 V)
(Q2): IDSS = 100 µA(Max.) (VDS = 30 V)
• Enhancement-mode
: (Q1) Vth = 1.1~2.3 V (VDS = 10 V, ID = 1 mA)
: (Q2) Vth = 1.1~2.3 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Q1
Q2
Drain-source voltage
V_DSS
30
30
V
Drain-gate voltage (R_GS = 20 kΩ)
V_DGR
30
30
V
Gate-source voltage
V_GSS
±20
±20
V
DC
Drain current
Pulse
(Note 1) I_D
6
(Note 1) I_DP
24
8.5
A
34
Drain power
dissipation
Single-device operation
(Note 3a)
P_D(1)
1.5
(t = 10s)
Single-device value at
(Note 2a) _{dual operation (Note 3b)}
P_D(2)
1.1
W
Drain power
dissipation
Single-device operation
(Note 3a)
P_D(1)
0.75
(t = 10s)
Single-device value at
(Note 2b) _{dual operation (Note 3b)}
P_D(2)
0.45
Single pulse avalanche energy
E_AS
46.8
93.9
(Note 4a) (Note 4b)
mJ
Avalanche current
I_AR
Repetitive avalanche energy
Single-device value at operation
E_AR
(Note 2a, 3b, 5)
6
8.5
A
0.11
mJ
Channel temperature
Storage temperature range
T_ch
150
°C
T_stg
−55~150
°C
1 SOURCE 4 GATE
2 GATE
5, 6DRAIN/CATHOUDE
3 SURCE/ANODE
7, 8 DRAIN
JEDEC
―
JEITA
―
TOSHIBA
2-6J1E
Weight: 0.080 g (typ.)
Circuit Configuration
87
65
12
Q1
34
Q2
(Includes Schottky Barrier Diode)
Note: (Note 1), (Note 2ab), (Note 3ab), (Note 4), (Note 5) Please see next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic sensitive device. Please handle with caution.
Schottky barrier diodes are having large-reverse-current-leakage characteristic compare to the other rectifier products.
This current leakage and not proper operating temprature or voltage may cause thermalrun. Please take forward and
reverse loss into consideration when you design.
1
2006-11-16