TC2997C Datasheet, PDF (2/3 Pages) Transcom, Inc. – 2.1 GHz 20 W Flange Ceramic Packaged GaAs Power FETs

ABSOLUTE MAXIMUM RATINGS at 25 °C
Symbol
Parameter
Rating
V_DS
Drain-Source Voltage
12 V
V_GS
Gate-Source Voltage
-5 V
I_DS
Drain Current
I_DSS
P_in
RF Input Power, CW
37 dBm
P_T
Continuous Dissipation
100 W
T_CH
Channel Temperature
175 °C
T_STG
Storage Temperature
- 65 °C to +175 °C
FLANGE PACKAGE OUTLINE (in mm)
Gate
TC2997C
PRE3_20050418
HANDLING PRECAUTIONS:
The user must operate in a clean, dry environment.
Electrostatic Discharge (ESD) precautions should be
observed at all stages of storage, handling, assembly, and
testing. The static discharge must be less than 300V.
Source
Drain
Source
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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