TC2491 Datasheet, PDF (2/3 Pages) Transcom, Inc. – 0.5 W Flange Ceramic Packaged PHEMT GaAs Power FETs

TC2491
REV4_20070507
ABSOLUTE MAXIMUM RATINGS (T_A=25 °C)
Symbol
Parameter
Rating
V_DS
Drain-Source Voltage
12 V
V_GS
Gate-Source Voltage
-5 V
I_DS
Drain Current
I_DSS
P_in
RF Input Power, CW
26 dBm
P_T
Continuous Dissipation
1.9 W
T_CH
Channel Temperature
175 °C
T_STG
Storage Temperature
- 65 °C to +175 °C
RECOMMANDED OPERATING CONDITION
Symbol
Parameter
Rating
V_DS
Drain to Source Voltage
I_D
Drain Current
8V
120 mA
HANDLING PRECAUTIONS:
The user must operate in a clean, dry environment.
Electrostatic Discharge (ESD) precautions should be
observed at all stages of storage, handling, assembly, and
testing. The static discharge must be less than 300V.
TYPICAL SCATTERING PARAMETERS (T_A=25 °C)
V_DS = 8 V, I_DS = 120 mA
-0.2
-0.4
S11
Mag Max
10
135
150
165
-180
-165
-150
-135
2
Per Div
S21
Swp Max
9GHz
3.0
45..00
10.0
Swp Min
2GHz
Swp Max
9 GHz
45
30
15
0
-15
-30
-45
Swp Min
2 GHz
Mag Max
0.1
12
10
5
0
13
5
150
90 ₇₅
S12
165
-180
-165
-150
-135 _-
0.025
12
0
-
10 ^-
5 ⁹⁰
-
75
Per Div
Swp Max
60 9 GHz
45
30
15
0
-15
-30
-
- ⁴⁵
60
Swp Min
2 GHz
Swp Max
9GHz
S22
3.0
45..00
10.0
-0.2
-0.4
Swp Min
2GHz
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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