TC1606N Datasheet, PDF (2/2 Pages) Transcom, Inc. – 2W High Linearity and High Efficiency GaAs Power FETs

ABSOLUTE MAXIMUM RATINGS (T_A=25 °C)
Symbol
Parameter
Rating
V_DS
Drain-Source Voltage
12.0 V
V_GS
Gate-Source Voltage
-5.0 V
I_DS
Drain Current
I_DSS
P_in
RF Input Power, CW
30 dBm
P_T
Continuous Dissipation
7.7 W
T_CH
Channel Temperature
175 °C
T_STG
Storage Temperature
- 65 °C to +175 °C
CHIP DIMENSIONS
TC1606N
REV4_20070502
1060 ! 12
D
D
D
D
S
G
S
G
S
G
S
G
S
470! 12
Units: Micrometers
Gate Pad: 76.0 x 59.5
Chip Thickness: 50
Drain Pad: 86.0 x 76.0
CHIP HANDLING
DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be
accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290°C ± 5°C; Handling Tool: Tweezers;
Time: less than 1min.
WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil
(0.018 to 0.025 mm) gold wire. Stage temperature: 220°C to 250°C; Bond Tip Temperature: 150°C; Bond Force:
20 to 30 gms depending on size of wire and Bond Tip Temperature.
HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised
during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all
stages of storage, handling, assembly, and testing. The static discharge must be less than 300V.
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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