TC1601 Datasheet, PDF (2/4 Pages) Transcom, Inc. – 2W High Linearity and High Efficiency GaAs Power FETs

TC1601
REV4_20060510
ABSOLUTE MAXIMUM RATINGS (T_A=25 °C) RECOMMANDED OPERATING CONDITION
Symbol
Parameter
Rating
Symbol
Parameter
Rating
V_DS
Drain-Source Voltage
12 V
V_GS
Gate-Source Voltage
-5 V
I_D
Drain Current
1.2 A
P_T
Continuous Dissipation
7.7 W
T_CH
Channel Temperature
175 °C
T_STG
Storage Temperature
- 65 °C to +175 °C
V_DS
Drain to Source Voltage
I_D
Drain Current
8V
500 mA
CHIP DIMENSIONS
1060± 12
D
D
D
D
470± 12
G
G
G
G
Units: Micrometers
Chip Thickness: 50
Gate Pad: 76.0 x 59.5
Drain Pad: 86.0 x 76.0
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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