TC1501 Datasheet, PDF (2/5 Pages) Transcom, Inc. – 1W High Linearity and High Efficiency GaAs Power FETs

ABSOLUTE MAXIMUM RATINGS (T_A=25 °C)
Symbol
V_DS
V_GS
I_DS
P_in
P_T
T_CH
T_STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
Rating
12 V
-5 V
I_DSS
28 dBm
3.8 W
175 °C
- 65 °C to +175 °C
TC1501
REV5_20070502
CHIP DIMENSIONS
600± 12
D
D
G
G
470± 12
Units: Micrometers
Chip Thickness: 50
Gate Pad: 79 x 59.5
Drain Pad: 86.0 x 76.0
CHIP HANDLING
DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be
accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290°C ± 5°C; Handling Tool: Tweezers;
Time: less than 1min.
WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil
(0.018 to 0.025 mm) gold wire. Stage temperature: 220°C to 250°C; Bond Tip Temperature: 150°C; Bond Force:
20 to 30 gms depending on size of wire and Bond Tip Temperature.
HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised
during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all
stages of storage, handling, assembly, and testing. The static discharge must be less than 300V.
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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