TC1304V Datasheet, PDF (2/2 Pages) Transcom, Inc. – Low Noise and Medium Power GaAs FETs

ABSOLUTE MAXIMUM RATINGS (T_A=25 °C)
Symbol
V_DS
V_GS
I_DS
I_GS
P_in
P_T
T_CH
T_STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Gate Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
Rating
7.0 V
-3.0 V
I_DSS
600 µA
24 dBm
800 mW
175 °C
- 65 °C to +175 °C
CHIP DIMENSIONS
320 ! 12
D
S GS
340 ! 12
TC1304V
REV5_20070502
Units: Micrometers
Chip Thickness: 50
Gate Pad: 75 x 70
Drain Pad: 80 x 70
Source Pad: 75 x 80
CHIP HANDLING
DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. For eutectic die attach can be
accomplished with Au-Sn (80%Au-20%Sn) perform in State Temperature: 290℃ ± 5 ℃ ; Handling Tool :
Tweezers ; Time: less than 1min .
WIRE BONDING: The recommended wire bond method is thermo-compression bonding with 0.7 or 1.0 mil
(0.018 or 0.025mm) gold wire. Stage Temperature: 220℃ to 250℃ ; Bond Tip Temperature : 150℃ ; Bond Force:
20 to 30 gms depending on size of wire and Bond Tip Temperature.
HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised
during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all
stages of storage, handling, assembly, and testing. The static discharge must be less than 300V.
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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