TC3989 Datasheet, PDF (1/3 Pages) Transcom, Inc. – 5.8 GHz 35.5 dBm Prematched FETs

TC3989
REV3_20070503
5.8 GHz 35.5 dBm Prematched FETs
FEATURES
• 35.5 dBm Typical Power at 5.8 GHz
• High Associated Gain: Ga = 8 dB Typical at 5.8 GHz
• High Linearity: IP3 = 46 dBm Typical at 5.8 Ghz
• High Power Added Efficiency: PAE ≥ 28 % for Class A Operation
• Suitable for High Reliability Application
• Lg = 0.6 µm, Wg = 12 mm
• 100 % DC and RF Tested
• Flange Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC3989 is a 35.5 dBm partially prematched power FET assembled in a flange ceramic package. It
requires simple matching networks to achieve high gain and high linearity for 5.8 GHz applications. All
devices are 100 % DC and RF tested to assure consistent quality.
ELECTRICAL SPECIFICATIONS
V_D=10 V, I_D=1100 mA, f=5.8 GHz
Parameter
Conditions
MIN TYP MAX UNIT
P_-1*
35 35.5
dBm
Ga*
7
8
dB
IP3
PAE
I_DSS
g_m
V_P
BV_DGO
R_th
P_out=23 dBm
@ P_-1
V_DS=2 V, V_GS=0 V
V_DS=2 V, V_GS=0 V
V_DS=2 V,I_D=24 mA
I_DGO=6 mA
46
28
3
2000
-1.7
18 22
2.5
dBm
%
A
mS
Volts
Volts
°C/W
ABSOLUTE MAXIMUM RATINGS at 25 °C
Symbol
V_DS
V_GS
I_D
P_T
P_in
T_CH
T_STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Dissipation
Input Power, CW
Channel Temperature
Storage Temperature
Rating
12 V
-5 V
3A
12 W
33 dBm
175 °C
- 65 °C to +175 °C
* FET TO BE TESTED IN TRANSCOM FIXTURE.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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