TC3977 Datasheet, PDF (1/1 Pages) Transcom, Inc. – 3 W Packaged Single-Bias PHEMT GaAs Power FETs

Preliminary
3 W Packaged Single-Bias PHEMT GaAs Power FETs
TC3977
PRE2_20050418
FEATURES
• 3W Typical Output Power
• 12dB Typical Linear Power Gain at 2.45GHz
• High Linearity: IP3 = 45 dBm Typical
• High Power Added Efficiency: Nominal PAE of 35%
• Breakdown Voltage: BV_DGO ≥ 18V
• Wg = 7.5 mm
• 100 % DC Tested
• Suitable for High Reliability Application
PHOTO ENLARGEMENT
DESCRIPTION
The TC3977 is a single-bias Cu-based ceramic packaged device with TC1706N PHEMT GaAs FETs, which is
designed to provide the single power supply. The Cu-based ceramic package provides excellent thermal
conductivity for the GaAs FET. The device is suitable for oscillator and power amplifiers in a wide range of
commercial application. All devices are 100% DC tested to assure consistent quality.
ELECTRICAL SPECIFICATIONS (@ 2.45 GHz)
Symbol
CONDITIONS
MIN
TYP
MAX
UNIT
P_1dB Output Power at 1dB Gain Compression Point V_DS = 10 V
34.5
35.5
G_L Linear Power Gain V_DS = 10 V
12
IP3 Intercept Point of the 3^rd-order Intermodulation V_DS = 10 V, *P_SCL = 24 dBm
45
PAE Power Added Efficiency at 1dB Compression Power
35
dBm
dB
dBm
%
I_DS
BV_DGO
R_th
Drain-Source Current at V_DS = 10 V
Drain-Gate Breakdown Voltage at I_DGO = 3.75mA
Thermal Resistance
900
18
22
5.3
mA
Volts
°C/W
Note: *P_SCL: Output Power of Single Carrier Level.
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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