TC3953A Datasheet, PDF (1/2 Pages) Transcom, Inc. – 1W Single-Bias and Prematched GaAs Power PHEMTs using SMT package

- Preliminary Datasheet -
TC3953A
PRE3_20070503
1W Single-Bias and Prematched GaAs Power PHEMTs using SMT package
FEATURES
• Prematched for 5~10 GHz
• 1W Typical Output Power at 5~10 GHz
• 6.5dB Typical Linear Power Gain at 10 GHz
• High Linearity: IP3 = 40 dBm Typical at 5~10 GHz
• High Power Added Efficiency: Nominal PAE of 35% at 5~10 GHz
• Breakdown Voltage: BV_DGO ≥ 15V
• Wg = 2.4 mm
• 100 % DC Tested
• Suitable for High Reliability Application
• Lost Cost SMT Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC3953A is a single-bias and prematched GaAs PHEMT. It is designed for use in low cost, high
volume, and 5~10 GHz 1W amplifiers. It provides a typical gain of 6.5 dB and P1dB of 30dBm at 10
GHz. The single positive drain bias is 9V and the typical drain-source current is 300mA. The device is
packaged in copper based ceramic 10 pins SMT packages. The copper based carrier of the package
allows direct soldering of the device to the PCB.
ELECTRICAL SPECIFICATIONS (T_A=25℃)
Symbol
CONDITIONS
MIN TYP MAX UNIT
P_1dB Output Power at 1dB Gain Compression Point, f = 10 GHz V_DS = 9V
29
30
G_L Linear Power Gain, f = 10 GHz V_DS = 9V
5.5
6.5
IP3 Intercept Point of the 3^rd-order Intermodulation, f = 10 GHz V_DS = 9V, *P_SCL = 17 dBm
40
PAE Power Added Efficiency at 1dB Compression Power, f = 10 GHz
35
dBm
dB
dBm
%
I_DS Drain-Source Current at V_DS = 9V
BV_DGO Drain-Gate Breakdown Voltage at I_DGO = 1.2mA
300
15
18
mA
Volts
Note: *P_SCL: Output Power of Single Carrier Level.
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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