TC3953 Datasheet, PDF (1/2 Pages) Transcom, Inc. – 1 W Single-Bias GaAs Power PHEMTs prematched for 5~8 GHz

- Preliminary Datasheet -
TC3953
PRE2_20070503
1 W Single-Bias GaAs Power PHEMTs prematched for 5~8 GHz
FEATURES
• Prematched for 5~8 GHz
• 1W of Typical Output Power at 5~8 GHz
• 8dB of Typical Linear Power Gain at 8 GHz
• High Linearity: IP3 = 40 dBm Typical at 5~8 GHz
• High Power Added Efficiency: Nominal PAE of 35 % at 5~8 GHz
• Breakdown Voltage: BV_DGO ≥ 15V
• Wg = 2.4 mm
• 100 % DC Tested
• Suitable for High Reliability Application
• Lost Cost SMT Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC3953 is a single-bias and prematched GaAs PHEMT. It is designed for use in low cost and high
volume 1W amplifiers for 5~8GHz. It provides typical gain of 8dB and P1dB of 30dBm at 8GHz. The
single positive drain bias is 9V and the typical drain-source current is 300mA. The device is packaged
in copper based ceramic 10 pins SMT packages. The copper based carrier of the package allows direct
soldering of the device to the PCB.
ELECTRICAL SPECIFICATIONS (T_A=25℃)
Symbol
CONDITIONS
MIN TYP MAX UNIT
P_1dB Output Power at 1dB Gain Compression Point, f = 8 GHz V_DS = 9V
29
30
dBm
G_L Linear Power Gain, f = 8 GHz V_DS = 9V
7
8
dB
IP3 Intercept Point of the 3^rd-order Intermodulation, f = 8 GHz V_DS = 9V, *P_SCL = 17 dBm
40
dBm
PAE Power Added Efficiency at 1dB Compression Power, f = 8GHz
35
%
I_DS Drain-Source Current at V_DS = 9V
BV_DGO Drain-Gate Breakdown Voltage at I_DGO = 1.2mA
300
15
18
mA
Volts
Note: *P_SCL: Output Power of Single Carrier Level.
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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