TC3938 Datasheet, PDF (1/3 Pages) Transcom, Inc. – Packaged Single-Bias Medium Power PHEMT GaAs FETs

TC3938
REV2_20070503
Packaged Single-Bias Medium Power PHEMT GaAs FETs
FEATURES
! 1.0 dB Typical Noise Figure at 12 GHz
! High Associated Gain: Ga = 8 dB Typical at 12 GHz
! 24dBm Typical Power at 12 GHz
! 9 dB Typical Linear Power Gain at 12 GHz
! Lg = 0.25 µm, Wg = 600 µm
! 100 % DC Tested
! Micro-X Metal Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC3938 is a single-bias medium power ceramic micro-x packaged device with TC1304 PHEMT GaAs FETs,
which is designed to provide the single power supply application. The device is suitable for oscillator, medium
power amplifier in a wide range of commercial applications. All devices are 100% DC tested to assure consistent
quality.
ELECTRICAL SPECIFICATIONS (T_A=25 °C)
Symbol
Conditions
NF Noise Figure at V_DS = 5 V, f = 12GHz
G_a Associated Gain at V_DS = 5 V, f = 12GHz
P_1dB Output Power at 1dB Gain Compression Point, f = 12GHz V_DS = 5 V
G_L Linear Power Gain, f = 12GHz V_DS = 5 V
I_DS Drain-Source Current at V_DS = 5 V
R_th Thermal Resistance
MIN
7
23
7.5
TYP
1.0
8
24
9
100
65
MAX
1.5
UNIT
dB
dB
dBm
dB
mA
°C/W
ABSOLUTE MAXIMUM RATINGS (T_A=25 °C)
Symbol
Parameter
Rating
V_DS
P_in
P_T
T_CH
T_STG
Drain-Source Voltage
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
7.0 V
24 dBm
600 mW
175 °C
-65°C to +175°C
HANDLING PRECAUTIONS:
The user must operate in a clean, dry environment.
Electrostatic Discharge (ESD) precautions should be
observed at all stages of storage, handling, assembly,
and testing. The static discharge must be less than 300V.
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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