TC3928 Datasheet, PDF (1/2 Pages) Transcom, Inc. – Packaged Single-Bias Low Noise PHEMT GaAs FETs

TC3928
REV1_20070503
Packaged Single-Bias Low Noise PHEMT GaAs FETs
FEATURES
! 0.9 dB Typical Noise Figure at 12 GHz
! High Associated Gain: Ga = 12 dB Typical at 12 GHz
! 21.5dBm Typical Power at 12 GHz
! 13 dB Typical Linear Power Gain at 12 GHz
! Lg = 0.25 µm, Wg = 300 µm
! 100 % DC Tested
! Micro-X Metal Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC3928 is a single-bias medium power ceramic micro-x packaged device with TC1201 PHEMT GaAs FETs,
which is designed to provide the single power supply application. The device is suitable for oscillator, medium
power amplifier in a wide range of commercial applications. All devices are 100% DC tested to assure consistent
quality.
ELECTRICAL SPECIFICATIONS (T_A=25 °C)
Symbol
Conditions
NF Noise Figure at VDS = 5 V, f = 12GHz
Ga Associated Gain at VDS = 5 V, f = 12GHz
P1dB Output Power at 1dB Gain Compression Point, f = 12GHz VDS = 5 V
GL Linear Power Gain, f = 12GHz VDS = 5 V
IDS Drain-Source Current at VDS = 2 V
Rth Thermal Resistance
MIN
10
20.5
12
TYP
0.9
12
21.5
13
50
125
MAX
1.5
UNIT
dB
dB
dBm
dB
mA
°C/W
ABSOLUTE MAXIMUM RATINGS (T_A=25 °C)
Symbol
Parameter
Rating
VDS
Drain-Source Voltage
7.0 V
Pin
RF Input Power, CW
21 dBm
PT
Continuous Dissipation
300 mW
TCH
Channel Temperature
175 °C
TSTG
Storage Temperature -65°C to +175°C
HANDLING PRECAUTIONS:
The user must operate in a clean, dry environment.
Electrostatic Discharge (ESD) precautions should be
observed at all stages of storage, handling, assembly,
and testing. The static discharge must be less than 300V.
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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