TC3921 Datasheet, PDF (1/3 Pages) Transcom, Inc. – Low - Cost Single-Bias Medium Power PHEMT GaAs FETs

TC3921
REV1_20070503
Low-Cost Single-Bias Medium Power PHEMT GaAs FETs
FEATURES
! 22 dBm Typical Output Power at 6 GHz
! High Linear Power Gain: G_L = 12 dB Typical at 6 GHz
! Lg = 0.25 µm, Wg = 300 µm
! 100 % DC Tested
! Low Cost Plastic SOT143R Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC3921 is a single-bias medium power SOT143R packaged device with TC1201 PHEMT chip, which is
designed to provide the single power supply applications. The device is suitable for oscillator, medium power
amplifier in a wide range of commercial applications. All devices are 100% DC tested to assure consistent
quality.
ELECTRICAL SPECIFICATIONS (T_A=25 °C)
Symbol
P_1dB
G_L
I_DS
R_th
Conditions
Output Power at 1dB Gain Compression Point, f
Linear Power Gain, f = 6 GHz, V_DS = 5 V
Drain-Source Current at V_DS = 5 V
Thermal Resistance
= 6GHz, V_DS = 5 V
MIN
21
10
TYP
22
12
40
125
MAX
UNIT
dBm
dB
mA
°C/W
ABSOLUTE MAXIMUM RATINGS (T_A=25 °C)
Symbol
V_DS
P_in
P_T
T_CH
T_STG
Parameter
Drain-Source Voltage
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
Rating
7.0 V
21 dBm
300 mW
175 °C
- 65 °C to +175 °C
HANDLING PRECAUTIONS:
The user must operate in a clean, dry environment.
Electrostatic Discharge (ESD) precautions should be
observed at all stages of storage, handling, assembly,
and testing. The static discharge must be less than
300V.
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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