TC3911 Datasheet, PDF (1/3 Pages) Transcom, Inc. – Low-Cost Single-Bias Low Noise PHEMT GaAs FETs

Low-Cost Single-Bias Low Noise PHEMT GaAs FETs
TC3911
REV2_20070503
FEATURES
• 1.5 dB Typical Noise Figure at 6 GHz
• 17 dBm Typical Output Power at 6 GHz
• High Linear Power Gain:G_L = 13dB Typical at 6 GHz
• Lg = 0.25 µm, Wg = 160 µm
• 100 % DC Tested
• Low Cost Plastic SOT143R Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC3911 is a single-bias medium power SOT143R packaged device with TC1101 PHEMT chip,
which is designed to provide a single power supply. The device is suitable for oscillator and low noise
amplifier in a wide range of commercial application. All devices are 100% DC tested to assure consistent
quality.
ELECTRICAL SPECIFICATIONS (T_A=25 °C)
Symbol
CONDITIONS
MIN
TYP
MAX
UNIT
NF Noise Figure at V_DS = 3.3 V, f = 6GHz
1.5
1.8
dB
f = 2.45GHz
16
17
P_1dB Output Power at 1dB Gain Compression Point, V_DS = 3.3 V
dBm
f = 6GHz
16
17
G_L Linear Power Gain, V_DS = 3.3 V
f = 2.45 GHz
18
20
dB
f = 6 GHz
11
13
I_DS Drain-Source Current at V_DS = 3.3 V
R_th Thermal Resistance
20
mA
230
°C/W
ABSOLUTE MAXIMUM RATINGS (T_A=25 °C)
Symbol
Parameter
Rating
V_DS
Drain-Source Voltage
7.0 V
P_in
RF Input Power, CW
18 dBm
P_T
Continuous Dissipation
150 mW
T_CH
Channel Temperature
175 °C
T_STG
Storage Temperature
- 65 °C to +175 °C
HANDLING PRECAUTIONS:
The user must operate in a clean, dry environment.
Electrostatic Discharge (ESD) precautions should be
observed at all stages of storage, handling, assembly, and
testing. The static discharge must be less than 300V.
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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